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Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1 μ s pulse width, 300 pps)
OP168, OP169, OP268, OP269 (A, B, C)
OP268FPS
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] (1)
-40 o C to +100 o C
2.0 V
50 mA
3.0 A
100 mA
260° C
Power Dissipation
(2)
100 mW
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
Apertured Radiant Incidence
OP168FA
OP168FB
OP168FC
0.48
0.43
0.27
-
-
-
-
0.73
-
E E (APT)(3)
V F
I R
λ P
OP169A
OP169B
OP169C
OP268FA
OP268FB
OP268FC
OP268FPS
OP269A
OP269B
OP269C
Forward Voltage
OP168, OP169
OP268, OP269
OP268FPS
Reverse Current
OP168, OP169, OP268, OP269
OP268FPS
Wavelength at Peak Emission
OP168, OP169
OP268, OP269
OP268FPS
0.18
0.11
0.03
0.64
0.45
0.36
0.10
0.58
0.42
0.34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
935
890
850
-
0.22
-
-
0.99
-
0.90
-
0.82
-
1.40
1.50
1.80
100
20
-
-
-
mW/cm
V
μA
nm
2
I F = 20 mA
Aperture = .081” dia.
Distance = .400” from tip of lens to
aperture surface
I F = 20 mA
V R = 2.0 V
I F = 20 mA
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), E E(APT) is a measurement of the average apertured radiant energy incident upon a
sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm)
from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), E E(APT) is a measurement of the average apertured radiant
energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens
and 0.653” (16.6 mm) from the lens tip. NOTE: E E(APT) is a measurement of the average radiant intensity within the cone formed by
the above conditions. E E(APT) is not necessarily uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
01/2012
Page 3 of 6
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相关代理商/技术参数
OP269 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES
OP269-003 制造商:TT Electronics / OPTEK Technology 功能描述:
OP269A 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP269B 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP269C 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP269SLA 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES
OP269SLB 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES
OP269SLC 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES